Fabrication and characterization of ZnS and ZnSe absorber layers for UV-selective transparent photovoltaics

We have fabricated ZnS, ZnSe and mixed Zn(S,Se) thin film layers for application as solar cell absorbers in ultraviolet (UV)-selective cells. the using a two-step process involving evaporation of Zn layer followed by an anneal H2S and/or H2Se containing atmosphere. A study annealing conditions was performed to minimize hole formation layer. Sulfur Selenium also developed order reach 3 eV band gap, such that absorbs all UV light leaves visible passing through. Next, we tried increase conductivity adding extrinsic doping elements. Cu found more than three orders magnitude, while leaving transparency mostly unchanged. Finally, devices were transparent back front contacts NiO buffer could measure very small photocurrent about 100 μA/cm2 open circuit voltage 500 mV under AM1.5 G illumination.